MSF10N80 8 00v n - channel mosfet publication order number: [ MSF10N80 ] ? bruckewe ll technology corporation rev. a - 2014 description the msf 10n80 is a n - channel enhancement - mode mosfet , providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. the to - 220f package is universally preferred for all c ommercial - industrial applications features ? 100% eas test ? rugged gate oxide technology ? extremely low intrinsic capacitances ? remarkable switching characteristics ? unequalled gate charge: 10.5 nc (typ.) ? extended safe operating area lower rds(on) : 5.5 (typ.) @vgs=10v ? rohs compliant package application ? power factor correction ? lcd tv power ? full and half bridge power packing & order information 50/tube ; 1,000/box graphic symbol maximum ratings and electrical characteristics absolute maximum ratings (tc=25c unless otherwise noted) symbol parameter value unit v ds s drain - source voltage 8 00 v v gs gate - source voltage 30 v i d drain current - continuous (tc=25 c ) 10 a drain current - continuous (tc= 100 c ) 6 .5 a i dm drain cur rent pulsed 40 a e as s ingle pulsed avalanche energy 960 mj e ar repetitive avalanche energy 24 mj
MSF10N80 8 00v n - channel mosfet publication order number: [ MSF10N80 ] ? bruckewe ll technology corporation rev. a - 2014 absolute maximum ratings (tc=25c unless otherwise noted) symbol parameter value unit dv/dt peak diode recovery dv/dt 4.0 v/ns p d power dissipation ( t c = 25 c) - derate above 25 c 60 w 0.48 w/ c t j ,t stg operating and storage temperature range - 55 to +150 c t l maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds 300 c ? drain current limited by maximum junction temperat ure thermal resistance characteristics symbol parameter max. unit s r jc junction - to - case 0.52 c /w r ja junction - to - ambient 40 on characteristics symbol parameter test conditions min typ. max. unit s v gs gate threshold voltage v ds = v gs , i d = 250a 3.0 -- 5.0 v r ds(on) static drain - source on - resistance v gs = 10 v , i d = 5 a -- 0.9 1.1 off characteristics symbol parameter test conditions min typ. max. unit s b v dss drain - source breakdown voltage v gs = 0 v , i d =250a 800 -- -- v b v dss / t j breakdown voltage temperature coefficient i d = 250a, referenced to 25 c - - 1.0 -- v/ c i dss zero gate voltage drain current v ds = 80 0 v , v gs = 0 v v ds = 64 0 v , t c = 125 c -- -- 10 100 a i gss f gate - body leakage current, forward v gs = 3 0 v , v d s = 0 v -- -- 100 n a i gssr gate - body leakage current, reverse v gs = - 3 0 v , v d s = 0 v -- -- - 100 n a dynamic characteristics symbol parameter test conditions min typ. max. unit s c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0mhz -- 2200 -- pf c oss output capacitance -- 190 -- pf c rss reverse transfer capacitance -- 20 -- pf
MSF10N80 8 00v n - channel mosfet publication order number: [ MSF10N80 ] ? bruckewe ll technology corporation rev. a - 2014 dynamic characteristics symbol parameter test conditions min typ. max. unit s t d(on) turn - on time v ds = 40 0 v, i d = 10 a, r g = 25 -- 60 -- ns t r turn - on time -- 150 -- ns t d(off) turn - off delay time -- 110 -- ns tf turn - off fall time -- 90 -- ns q g total gate charge v ds = 64 0 v,i d = 10 a, v gs = 10 v -- 46 -- nc q gs gate - source charge -- 15 -- nc q g d gate - drain charge -- 20 -- nc source - drain diode maximum ratings and characteristics symbol parameter test conditions min typ. max. unit s i s continuous source - drain diode forward current -- -- 10 a i sm pulsed source - drain diode forward current -- -- 40 v sd source - drain diode forward voltage i s = 10 a , v gs = 0 v -- -- 1.4 v t rr reverse recovery time i s = 10 a , v gs = 0 v dif/dt = 100a/s -- 730 -- ns q rr reverse recovery charge -- 12 -- c notes; 1. repetitive rating: pulse width limited by maximum junction temperature 2. l= 18 mh, i as = 10 a, v dd =5v, r g =25 , starting t j =25 3. i sd Q 10 a , di/dt Q 2 00a/ s,v dd Q bv dss , starting t j =25 4. pul se test: pulse width Q 300 s, duty cycle Q 2% 5. essentially independent of operating temperature
MSF10N80 8 00v n - channel mosfet publication order number: [ MSF10N80 ] ? bruckewe ll technology corporation rev. a - 2014 characteristics curve fig.1 - on region characteristics fig. 2 - transfer characteristics fig.3 - on resistance variation vs drain current an d gate voltage fig.4 - body diode forward voltage variation with source current and temperature fig.5 - capacitance characteristics fig.6 - gate charge characteristics
MSF10N80 8 00v n - channel mosfet publication order number: [ MSF10N80 ] ? bruckewe ll technology corporation rev. a - 2014 characteristics curve fig. 7 - breakdown voltage variation vs temperature fig. 8 - on - resistance variation vs temperature fig. 9 - maximum safe operating area fig. 10 - maximum drain current vs case temperature
MSF10N80 8 00v n - channel mosfet publication order number: [ MSF10N80 ] ? bruckewe ll technology corporation rev. a - 2014 characteristics test circuit & waveform fig 12. resistive switching test circuit & waveforms fig 13. ga te charge test circuit & waveform fig 14. unclamped inductive switching test circuit & waveforms
MSF10N80 8 00v n - channel mosfet publication order number: [ MSF10N80 ] ? bruckewe ll technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwi se. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or i n any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by a pplicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. (iii) any and all implied warranties , including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typical requirements that are often pl aced on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsibility to validate that a particular product with the properties d escribed in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or o therwise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.
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